4.7 Article

Controlled growth of SiC crystals in combustion synthesis

期刊

JOURNAL OF THE AMERICAN CERAMIC SOCIETY
卷 105, 期 1, 页码 44-49

出版社

WILEY
DOI: 10.1111/jace.18060

关键词

combustion synthesis; controlled growth; nanocrystals; beta-SiC

资金

  1. National Natural Science Foundation of China [U20A20241, 51902174]
  2. China Postdoctoral Science Foundation [2018M641344, 2020T130335]

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β-SiC powders with different particle morphologies were prepared by combustion synthesis using carbon black, carbon fiber, graphene, and graphite as carbon sources. The morphology of the precursor carbon source plays a crucial role in determining the particle morphology of SiC during the controlled growth process.
beta-SiC powders with different particle morphologies were prepared by combustion synthesis in an N-2 atmosphere, with carbon black, carbon fiber, graphene, and graphite as carbon sources. With carbon black as the carbon source, single-phase beta-SiC nanopowder with an average particle size around 20 nm was obtained. From carbon fiber and graphene, SiC fibers and sheets were produced, which were polycrystalline and consisted of lots of nanocrystals with random orientations. It was proposed that the synthesis of SiC occurs by gas-solid reaction and the growth of SiC is confined to the carbon particles. In the controlled growth of SiC, the morphology of the precursor carbon is preserved, offering an opportunity to control the particle morphology of SiC by changing carbon sources.

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