Bi-doped GaTe single crystals: Growth and thermoelectric properties

Here bismuth (Bi) was utilized to substitute Te sites to increase the hole concentration, thereby enhancing the thermoelectric performance of GaTe. Bi-doped GaTe single crystals have successfully been fabricated by a temperature gradient technique. Bi atoms acting as acceptors helped to increase hole concentration from 9.43 x 10(15) cm(3) for pristine GaTe to 0.63, 0.90, 1.20, and 1.63 x 10(17) cm(-3) for BGT-1, BGT-2, BGT-3, and BGT-4 single crystals, respectively. Moreover, the carrier mobility was increased up to 68.25 cm(2)V(-1)s(-)(1) due to the crystallinity improvement of GaTe. Consequently, the electrical conductivity and power factor (PF) reached the respective maximum values of 3.62 S cm(-1) and 1.21 1.1W cm(-1) K-2 at 500 K for BGT-4 crystals. Meanwhile, Bi doping less affected the thermal transport properties of GaTe single crystals. A peak zT of similar to 0.02 was achieved at 700 K for the BGT-4 sample.

Automated summary

Bismuth (Bi) was utilized to increase hole concentration in GaTe by substituting Te sites, leading to enhanced thermoelectric performance. Bi-doped GaTe single crystals showed improved carrier mobility and enhanced electrical conductivity and power factor. The thermal transport properties of GaTe single crystals were less affected by Bi doping, while a peak zT value of around 0.02 was achieved at 700 K for Bi-doped GaTe single crystals.