4.6 Article

Computing the local ion concentration variations for electric-double-layer-modulation microscopy

期刊

出版社

IOP Publishing Ltd
DOI: 10.1088/1361-6463/ac100b

关键词

electric double layer; electroreflectance; potentiodynamic microscopy; cyclic voltametry; surface charge

资金

  1. Netherlands Organization for Scientific Research (NWO) [680.91.16.03]
  2. China Scholarship Council [CSC 201806890015]
  3. National Natural Science Foundation of China [22078088]

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The study introduces a new method called electric-double-layer-modulation microscopy, which can generate optical contrast sensitive to surface charge and local topography by modulating the electric potential on a conducting electrode. The observable optical contrast is proportional to the derivative of ion concentration with respect to the modulated potential, depending on the size of the object and its surface charge, with nanoholes being the most suitable geometry for achieving elementary charge sensitivity.
Modulation of the electric potential on a conducting electrode is presented to generate an optical contrast for scattering microscopy that is sensitive to both surface charge and local topography. We dub this method electric-double-layer-modulation microscopy. We numerically compute the change in the local ion concentration that is the origin of this optical contrast for three experimentally relevant geometries: nanosphere, nanowire, and nanohole. In absence of plasmonic effects and physical absorption, the observable optical contrast is proportional to the derivative of the ion concentration with respect to the modulated potential. We demonstrate that this derivative depends on the size of the object and, less intuitively, also on its surface charge. This dependence is key to measuring the surface charge, in an absolute way, using this method. Our results help to identify the experimental conditions such as dynamic range and sensitivity that will be necessary for detecting the elementary charge jumps. We conclude that the nanohole is the most suitable geometry of the three for achieving elementary charge sensitivity.

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