期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 54, 期 50, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ac28bc
关键词
(Bi (x) Sb1-x )(2)Te-3; topological insulator; interfacial layer; Cr2O3; carrier density
资金
- National Science Foundation [DMR2004125]
- center for Quantum Materials Synthesis (cQMS) - Gordon and Betty Moore Foundation's EPiQS initiative [GBMF6402]
- MURI [W911NF2020166]
The use of epitaxial Cr2O3 as a buffer layer and amorphous Cr2O3 as a capping layer in the growth of BST films demonstrated lower carrier density and higher mobility, highlighting the significance of interfacial layers in TI films.
Band structure engineering and interfacial buffer layers have been demonstrated as effective means to tune the Fermi level in topological insulators (TIs). In particular, the charge compensated compound (Bi (x) Sb1-x )(2)Te-3 (BST) plays a critical role in the molecular beam epitaxy growth of magnetic TIs. Here we introduce a strategy of exploiting epitaxial Cr2O3 as a buffer layer and amorphous Cr2O3 as a capping layer in the growth of BST films. These films exhibit carrier density lower than 10(12) cm(-2) over a wide range of Bi contents and higher mobility than BST films directly grown on Al2O3 substrate, shedding light on the importance of interfacial layers for TI films and paving a new avenue to the application of magnetic BST films.
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