Performances of thin film transistors with Ga-doped ZnO source and drain electrodes

In this paper, indium-gallium-zinc-oxide thin film transistors (TFTs) were successfully fabricated by the pulsed laser deposition Ga-doped ZnO (GZO) films as source/drain (S/D) electrodes. And the GZO electrodes involved were prepared at room temperature. It was found that with the increase of Ga doping content, the electrical properties of TFTs increased first and then decreased. When the doping amount of Ga2O3 was 2 wt.%, the TFT showed excellent performance with a mu (sat) of 12.22 cm(2)V(-1) s(-1), an I (on)/I (off) of 6.4 x 10(7), a V (on) of 0 V and a SS of 0.082 V decade(-1). At this time, the contact between the S/D electrodes and the active layer was ohmic and the TFT had a very low contact resistance with an R (SD-eff) of 0.064 omega cm(2). In addition, the device exhibited good electrical stability, and the drift of V (on) is only 2/-0.2 V at a positive/negative bias gate voltage of +10 V/-10 V with a duration of 5400 s under dark condition.

Automated summary

Indium-gallium-zinc-oxide thin film transistors were successfully fabricated in this study, with Ga-doped ZnO films prepared as source/drain electrodes at room temperature. The electrical properties of the TFTs showed an increase followed by a decrease with the increase of Ga doping content, and the optimal performance was achieved at 2 wt.% Ga2O3 doping. The devices also exhibited good electrical stability under dark conditions for a duration of 5400 s.