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Baorui Xia et al.
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Jiong Lu et al.
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Chunming Huang et al.
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Yongji Gong et al.
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Yi Zhang et al.
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Jiangang He et al.
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P. Sutter et al.
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Won Seok Yun et al.
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Jason K. Ellis et al.
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Yafei Li et al.
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JV Lauritsen et al.
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One-dimensional metallic edge states in MoS2 -: art. no. 196803
MV Bollinger et al.
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Temperature dependence piezoreflectance study of the effect of doping MoS2 with rhenium
KK Tiong et al.
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S Helveg et al.
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P Raybaud et al.
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