4.8 Article

Remote Passivation in Two-Dimensional Materials: The Case of the Monolayer-Bilayer Lateral Junction of MoSe2

期刊

JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 12, 期 33, 页码 8046-8052

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.1c02457

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资金

  1. National Natural Science Foundation of China [11904288, 12074235]
  2. Natural Science Basic Research Program of Shaanxi [2020JQ-118]
  3. Ningbo Natural Science Foundation [202003N4056]
  4. Northwestern Polytechnical University [2020GXLH-Z-026]
  5. Fundamental Research Funds for the Central Universities of China
  6. U.S. DOE [DE-SC0002623]
  7. NERSC under DOE [DE-AC02-05CH11231]
  8. Department of Science & Technology of Shaanxi Province [2020GXLH-Z-026]

向作者/读者索取更多资源

Two-dimensional monolayer-bilayer lateral junctions have clean interfaces and lack reconstruction at the edges of the half layer in the presence of unintentional dopants, allowing for dopants to passivate edge states remotely due to reduced dimensionality electrostatics.
Two-dimensional (2D) monolayer-bilayer (ML-BL) lateral junctions (LJs) have recently attracted attention due to their straightforward synthesis and resulting clean interface. Such systems consist of an extended ML with a secondary layer present only over half of the system, leading to an interface that is associated with the terminating edge of the secondary half layer. Our first-principles calculations reveal that the edges of the half layer completely lack reconstruction in the presence of unintentional dopants, in this case, Re. This observation is in startling contrast to the known physics of three-dimensional (3D) semiconductor surfaces where reconstruction has been widely observed. Herein, the electrostatics of the reduced dimensionality allows for greater separation between compensating defects, enabling dopants to remotely passivate edge states without needing to directly participate in the chemistry.

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