期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 125, 期 24, 页码 13610-13618出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.1c02203
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The study focuses on the synthesis of all-inorganic RbPbI3 perovskite nanorods and investigates the impact of chloride doping on resistive switching applications. Devices with chloride-doped RbPbI3 in PMMA exhibit more prominent RS behavior, highlighting the importance of appropriate doping concentration for improved device performance.
The magnificent properties of all-inorganic halide perovskites prompt them to be explored in electronic applications. In this report, we synthesized all-inorganic RbPbI3 perovskite nanorods (PNRs), with and without halide mixing. Synthesized perovskite nanorods were embedded in poly(methyl methacrylate) (PMMA) for resistive switching (RS) application. The devices with pure RbPbI3 PNRs@PMMA did not show significant switching characteristics. However, the devices with chloride (CO-doped RbPbI3 in PMMA exhibited prominent RS behavior, which is attributed to the induction of defect/trap states due to Cl substitution at the halide site. However, a suitable concentration of the Cl-doped RbPbI3 in the PMMA matrix is desired for better device performance in terms of reliability, flexibility, and long-term stability. Finally, the switching mechanism could be explained in association with charge trapping and detrapping, facilitated by the defects/traps inside the mixed halide PNRs.
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