期刊
JOURNAL OF NON-CRYSTALLINE SOLIDS
卷 563, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jnoncrysol.2021.120803
关键词
Organic-inorganic; Hybrid films; Zirconia; PMMA; Nanoindentation; Transistors
资金
- CONACYT-Mexico [242549, 271031]
In this study, organic-inorganic PMMA-GPTMSZrO2 hybrid films were synthesized and characterized. The properties of the films were found to depend on the amount of GPTMS in their composition. When used as dielectric gate in TFTs with ZnO as the semiconductor, the hybrid films showed good performance at low operating voltages.
We report the synthesis, characterization, and dielectric gate application of organic-inorganic PMMA-GPTMSZrO2 hybrid films, where GPTMS (3-glycidyloxypropyl(trimethoxy)silane) is the coupling agent. Three hybrid films were deposited by sol-gel varying the GPTMS concentration in the precursor solution, and their properties were analyzed by UV-Vis, FTIR, TGA, AFM, FE-SEM, EDS, XPS, and nanoindentation. Their electrical properties were measured on MIM devices. The homogeneity and high optical transparency of the hybrid films bear out the achievement of cross-linked organic-inorganic phases. The optical, mechanical, and dielectric properties of the hybrid films depend on the amount of GPTMS in their composition. The refractive index, mechanical hardness, elastic modulus, and dielectric constant of the hybrid films varied in the ranges of 1.54-1.61, 2.2-2.7 GPa, 87-123 GPa, and 7.6-13.6, respectively, depending on the GPTMS amount. The hybrid films were applied as dielectric gate in TFTs with ZnO as the semiconductor exhibiting good performance at low operating voltages.
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