Ag nanoparticles capped TiO2 nanowires array based capacitive memory

Glancing angle deposition technique was used to fabricate Ag nanoparticles (NPs) capped TiO2 Nanowire (NW) array structure for capacitive memory application. Electron microscopes confirmed the sandwiched structure of Ag NPs between TiO2 thin-film (TF) and NW. The average length of the vertical TiO2 NW and diameter of Ag NPs (with density similar to 10(12) cm(2)) were found to be similar to 350 +/- 5 nm and similar to 3.2 +/- 0.4 nm, respectively. An enhanced photoluminescence was observed in case of Ag NPs capped TiO2 NWs due to the presence of high carriers as compared to bare TiO2 NW. The capacitance (C)-voltage (V) hysteresis was measured for both Ag NPs capped TiO2 NW and bare TiO2 NW at different sweeping voltage (+/- 3- +/- 10 V) at 1 MHz frequency. A high capacitive memory window of 7.12 V was obtained for Ag NP capped TiO2 NW at +/- 10 V with an excellent endurance upto 1000 cycle. Significantly lesser charge loss of 23% was obtained after a span of 10(4) s with a hole and electron loss of 10.6% and 17.8% respectively. The program and erase process in the device was explained with the help of a band diagram.

Automated summary

The study utilized glancing angle deposition technique to fabricate a structure of Ag nanoparticles capped TiO2 nanowire array, demonstrating enhanced photoluminescence and a high capacitive memory window. The device showed excellent endurance and significantly lesser charge loss after a span of time, with a clear explanation of the programming and erasing process using a band diagram.