Investigation of structural, optical and radiation shielding properties of boron-doped In2O3 thin films

Indium oxide and boron-doped indium oxide thin films were produced using the spray pyrolysis method. XRD measurements were made to determine the structural properties of these synthesized films, and it was observed that the films had a cubic structure. Morphological properties were examined, and it was observed that films were generally homogeneous. It has been observed from the Uv-Vis spectrometer measurements that the transmittance rates increase with the boron doping. The mass and linear attenuation coefficients, half-value layer, mean free path and tenth value layer of different percentages for undoped and boron-doped thin films were investigated experimentally. Electron detector and 6 MeV energy electrons were used in irradiation to make these measurements. The experimental results determined that added boron to indium oxide thin films positively contributed to the radiation shielding property.

Automated summary

Indium oxide and boron-doped indium oxide thin films were synthesized using the spray pyrolysis method. XRD measurements revealed a cubic structure in the films, while morphological analysis showed overall homogeneity. Experimental investigation showed that boron doping increased transmittance rates and positively contributed to radiation shielding properties in the thin films.