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Zhongrui Wang et al.
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Ji Hwan Lee et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2020)
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A. Zaffora et al.
FARADAY DISCUSSIONS (2019)
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A. Zaffora et al.
FARADAY DISCUSSIONS (2019)
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Y. M. Sun et al.
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MemSens: a new detection method for heavy metals based on silver nanoparticle assisted memristive switching principle
Aishwarya V. Pawar et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2019)
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Stefan Slesazeck et al.
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ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
Firman Mangasa Simanjuntak et al.
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Resistive memory switching of transition-metal complexes controlled by ligand design
Jiang-Yang Shao et al.
COORDINATION CHEMISTRY REVIEWS (2019)
Organic resistive switching device based on cellulose-gelatine microcomposite fibers
Pratiksha T. Chandane et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2019)
Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)-Part II: Design Guidelines for Device, Array, and Architecture
Zizhen Jiang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension
Shuang Pi et al.
NATURE NANOTECHNOLOGY (2019)
Artificial Neuron using Vertical MoS2/Graphene Threshold Switching Memristors
Hirokjyoti Kalita et al.
SCIENTIFIC REPORTS (2019)
A fully integrated reprogrammable memristor-CMOS system for efficient multiply-accumulate operations
Fuxi Cai et al.
NATURE ELECTRONICS (2019)
Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co3O4 thin films prepared by a sol-gel technique
Chuangye Yao et al.
RSC ADVANCES (2019)
Organic and hybrid resistive switching materials and devices
Shuang Gao et al.
CHEMICAL SOCIETY REVIEWS (2019)
Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1-xBixI3 Perovskite-Based Memory Device
Shuaipeng Ge et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Electroforming free controlled bipolar resistive switching in Al/CoFe2O4/FTO device with self-compliance effect
Sandeep Munjal et al.
APPLIED PHYSICS LETTERS (2018)
A Scalable In-Memory Logic Synthesis Approach Using Memristor Crossbar
Rahul Gharpinde et al.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS (2018)
Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications
Aize Hao et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2018)
Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure
Quanli Hu et al.
MICROELECTRONIC ENGINEERING (2018)
Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications
Jun Tae Jang et al.
SOLID-STATE ELECTRONICS (2018)
Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits
F. Merrikh Bayat et al.
NATURE COMMUNICATIONS (2018)
Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films
A. Ranjan et al.
SCIENTIFIC REPORTS (2018)
About v-i Pinched Hysteresis of Some Non-Memristive Systems
Dalibor Biolek et al.
MATHEMATICAL PROBLEMS IN ENGINEERING (2018)
Resistive Memory-Based Analog Synapses The pursuit for linear and symmetric weight update
Jiyong Woo et al.
IEEE NANOTECHNOLOGY MAGAZINE (2018)
PCMO-Based RRAM and NPN Bipolar Selector as Synapse for Energy Efficient STDP
S. Lashkare et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Reversible optical switching memristors with tunable STDP synaptic plasticity: a route to hierarchical control in artificial intelligent systems
Ayoub H. Jaafar et al.
NANOSCALE (2017)
Compliance-Free ZrO2/ZrO2- x/ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour
Ruomeng Huang et al.
NANOSCALE RESEARCH LETTERS (2017)
Stochastic dynamics of resistive switching: fluctuations lead to optimal particle number
Paul K. Radtke et al.
NEW JOURNAL OF PHYSICS (2017)
Compliance-Free ZrO2/ZrO2- x/ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour
Ruomeng Huang et al.
NANOSCALE RESEARCH LETTERS (2017)
Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics
Su-Ting Han et al.
ADVANCED SCIENCE (2017)
Synaptic behaviour in ZnO-rGO composites thin film memristor
G. M. Khanal et al.
ELECTRONICS LETTERS (2017)
Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices
Hung-Ju Yen et al.
POLYMER JOURNAL (2016)
Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant
M. Ismail et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
Ruomeng Huang et al.
MICROELECTRONIC ENGINEERING (2016)
Defining Switching Efficiency of Multilevel Resistive Memory with PdO as an Example
K. D. M. Rao et al.
ADVANCED ELECTRONIC MATERIALS (2016)
Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors
M. Prezioso et al.
SCIENTIFIC REPORTS (2016)
Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor
Hao Jiang et al.
SCIENTIFIC REPORTS (2016)
Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices
Younggul Song et al.
SCIENTIFIC REPORTS (2016)
Simple Chemical Solution Deposition of Co3O4 Thin Film Electrocatalyst for Oxygen Evolution Reaction
Hyo Sang Jeon et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics
Chao Du et al.
ADVANCED FUNCTIONAL MATERIALS (2015)
Optimization of Conductance Change in Pr1-xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems
Jun-Woo Jang et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering
Amit Prakash et al.
IEEE ELECTRON DEVICE LETTERS (2015)
A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State
Francesco Maria Puglisi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Pinched hysteresis with inverse-memristor frequency characteristics in some nonlinear circuit elements
M. E. Fouda et al.
MICROELECTRONICS JOURNAL (2015)
One-dimensional porous nanofibers of Co3O4 on the carbon matrix from human hair with superior lithium ion storage performance
Yanli Tan et al.
SCIENTIFIC REPORTS (2015)
Plasticity in memristive devices for spiking neural networks
Sylvain Saighi et al.
FRONTIERS IN NEUROSCIENCE (2015)
Hydrothermal Preparation and White-Light-Controlled Resistive Switching Behavior of BaWO4 Nanospheres
Bai Sun et al.
NANO-MICRO LETTERS (2015)
Facile Synthesis of Co3O4@CNT with High Catalytic Activity for CO Oxidation under Moisture-Rich Conditions
Chung-Hao Kuo et al.
ACS APPLIED MATERIALS & INTERFACES (2014)
A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
Jun Yeong Seok et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory
Stefano Ambrogio et al.
ADVANCED MATERIALS (2014)
Enhanced electrochemical performance of flower-like Co3O4 as an anode material for high performance lithium-ion batteries
Harsharaj S. Jadhav et al.
ELECTROCHIMICA ACTA (2014)
On memristor ideality and reciprocity
Panayiotis S. Georgiou et al.
MICROELECTRONICS JOURNAL (2014)
Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems
Yi Li et al.
SCIENTIFIC REPORTS (2014)
Performing Stateful Logic on Memristor Memory
Xuan Zhu et al.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS (2013)
Ultrafast Synaptic Events in a Chalcogenide Memristor
Yi Li et al.
SCIENTIFIC REPORTS (2013)
STDP and STDP variations with memristors for spiking neuromorphic learning systems
T. Serrano-Gotarredona et al.
FRONTIERS IN NEUROSCIENCE (2013)
Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications
Jaewon Jang et al.
ADVANCED MATERIALS (2012)
A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching
Benlin Hu et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2012)
In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory
Sang-Jun Choi et al.
ADVANCED MATERIALS (2011)
On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO2\Pt Memory Systems
L. Goux et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2010)
Resistance Controllability of Ta2O5/TiO2 Stack ReRAM for Low-Voltage and Multilevel Operation
M. Terai et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Sung Hyun Jo et al.
NANO LETTERS (2010)
The missing memristor found
Dmitri B. Strukov et al.
NATURE (2008)