(Gd1-xTbx)3(Al1-yGay)5O12 green phosphors with high quantum yield and low thermal quenching via modulation the Ga3+ admixture

(Gd1-xTbx)3(Al1-yGay)5O12(x = 0.02-0.4, y = 0.2-1) garnet green phosphors were synthesized through the solidstate reaction method. The phase analyses and luminescence properties of phosphors were investigated as a function of the Ga3+ admixture content with the aim of development of thermal stable and efficient green phosphors. The results show that pure garnet was synthesized only when the Ga3+ content is high enough(y >= 0.4) and the optimal content of Tb3+ was 10 at.% Tb3+ (x = 0.1). The spectra intensity and the thermal stability of phosphors strongly depend on the Ga3+ content. The (Gd0.9Tb0.1)3(Al0.6Ga0.4)5O12 phosphor has maximum emission intensity with a high quantum efficiency about 87.72%, and it has best thermal stability with a highest quenching temperature of 488 K. Therefore, the (Gd0.9Tb0.1)3(Al0.6Ga0.4)5O12 phosphor is potential to be served as green phosphors in lightings and displays.

Automated summary

(Gd1-xTbx)3(Al1-yGay)5O12 garnet green phosphors were synthesized via solid-state reaction method, with the optimal synthesis conditions identified as high Ga3+ content and 10% Tb3+ content. The luminescence properties and thermal stability of the phosphors strongly depended on the Ga3+ content. The (Gd0.9Tb0.1)3(Al0.6Ga0.4)5O12 phosphor exhibited the highest emission intensity, quantum efficiency, and thermal stability, making it a potential candidate for green phosphors in lighting and displays.