The scintillation mechanisms in Ce and Tb doped (GdxY1-x)Al2Ga3O12 quaternary garnet structure crystalline ceramics

Scintillation mechanisms and performance parameters of quaternary (Gd,Y)(3)Al2Ga3O12 compositionally disordered polycrystalline garnet type ceramics doped with Ce or Tb have been investigated for the first time. Similar light yield dependence on a Gd content in the composition was evidenced for both dopants. The highest light yield achieved in Tb doped samples was found to be four times higher than in Ce doped samples, which was achieved by tuning of the resonance conditions for energy transfer from Gd subsystem to Tb3+ activators due to the variation of Gd content in the matrix. The exceptional role of the Gd3+ subsystem is forming the high light yield of Tb doped quaternary garnets under different kinds of ionizing radiation is pointed out.

Automated summary

For the first time, the scintillation mechanisms and performance parameters of quaternary (Gd,Y)(3)Al2Ga3O12 compositionally disordered polycrystalline garnet type ceramics doped with Ce or Tb were investigated. It was found that the light yield dependence on Gd content in the composition was similar for both dopants. The highest light yield achieved in Tb doped samples was four times higher than in Ce doped samples, which was achieved by tuning the resonance conditions for energy transfer from Gd subsystem to Tb3+ activators by varying Gd content in the matrix. The exceptional role of the Gd3+ subsystem in forming the high light yield of Tb doped quaternary garnets under different kinds of ionizing radiation was emphasized.