期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 50, 期 9, 页码 5396-5401出版社
SPRINGER
DOI: 10.1007/s11664-021-09065-6
关键词
Zirconium dioxide; plasma-enhanced atomic layer deposition; resistive switching; non-volatile memory; resistive random access memory
资金
- Department of Defense, United States [W911NF-17-1-0474]
The resistive switching properties of nanoscale ZrO2 thin films deposited by PE-ALD were investigated, demonstrating bipolar resistive switching characteristics with promising parameters for memory applications. The study also presented a SPICE model to simulate the device behavior, showing good agreement with experimental data and confirming the potential of PE-ALD ZrO2 for non-volatile resistive random access memories.
Resistive switching properties of nanoscale zirconium dioxide (ZrO2) thin film deposited by plasma-enhanced atomic layer deposition (PE-ALD) have been investigated. A resistive memory device has been formed with a 10-nm-thick ZrO2 film as an active switching layer sandwiched between an aluminum top electrode and a silver bottom electrode. Bipolar resistive switching characteristics were demonstrated by current-voltage measurements with a read memory window of 6.6 V, an ON/OFF current ratio of nearly 10(5) , and a retention time of 10(4) s. Current conduction at low resistance states follows Ohm's law while at a high-resistance state governed by space charge limited conduction. These indicate that the switching mechanism is attributed to filamentary conduction. A SPICE model was applied to model the device, with simulation measurement data in good agreement. This study proves the potential applications of PE-ALD ZrO2 for non-volatile resistive random access memories.
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