4.7 Article

In situ synthesis of g-C3N4 by glass-assisted annealing route to boost the efficiency of perovskite solar cells

期刊

JOURNAL OF COLLOID AND INTERFACE SCIENCE
卷 591, 期 -, 页码 326-333

出版社

ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2021.02.028

关键词

Electron transport layer; Graphitic carbon nitride; Perovskite solar cells; Photovoltaic performance

资金

  1. National Natural Science Foundation of China [21972060, 21875041, U1505241]
  2. Science and Technology Project of Fujian Provincial Department of Education [JAT190625]
  3. Natural Science Foundation of Fujian Provincial Department of Science and Technology [2020J01852, 2020J02046]
  4. Fuzhou Science and Technology Project [2019-G-62]

向作者/读者索取更多资源

The study successfully improved the power conversion efficiency of perovskite solar cell devices by introducing graphitic carbon nitride (g-C3N4) additive into TiO2-based ETLs, mainly due to the positive influence on the crystalline quality, conductivity, and photovoltaic properties of the perovskite layers, as well as the rapid electron migration and suppression of charge recombination facilitated by favorable energy level alignment.
TiO2-based electron transport layers (ETLs) show tremendous advantages in constructing efficient perovskite solar cells (PSCs), but the power conversion efficiency (PCE) needs further improvements. Thus, in this study, graphitic carbon nitride (g-C3N4), a typical two-dimensional material, was synthesized in-situ and introduced into TiO2-based ETLs as an additive via a facile glass-assisted annealing route. The results demonstrated that the addition of g-C3N4 positively influenced the crystalline quality of the perovskite layers, as well as the conductivity and photovoltaic properties of the devices. Furthermore, favorable energy level alignment facilitated rapid migration of electrons and suppressed charge recombination at the interfaces. Consequently, the champion device fabricated using the g-C3N4-modified ETL achieved a maximum PCE of 20.46% owing to the remarkable improvement in the V-OC, J(SC), and fill factor. The PCE is approximately 20% higher than that obtained for the pristine device, i.e., 17.18%. (C) 2021 Elsevier Inc. All rights reserved.

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