Enhancing efficiency of perovskite solar cells from surface passivation of Co2+ doped CuGaO2 nanocrystals

Before completely applying inorganic materials as hole transport materials (HTM) for perovskite solar cells (PSCs), modifying devices with inorganic oxides that have the potential as inorganic hole transporters is an effective way to improve device performance and stability. Co2+ doped CuGaO2 nanocrystals (Co-CuGaO2 NCs) with sizes about 20 nm are synthesized by hydrothermal method and used for surface passivation at the interface of perovskite (PVK)/2,20,7,70-Tetrakis[N,N-di (4-methoxyphenyl) amino]-9,90- spirobifluorene (spiroOMeTAD). Co-CuGaO2 NCs have a larger bandgap with lower valance band compared with spiroOMeTAD, which is more beneficial to the conduction of holes and the blocking of electrons. Furthermore, the Co-CuGaO2 has a lower valance band energy compared with the original CuGaO2, which reduces the energy gap between Co-CuGaO2 and PVK. Co-CuGaO2 NCs fully cover the upper surface of PVK, which helps prevent direct contact between PVK and oxygen and moisture. The Co-CuGaO2 NCs surface passivation also gives better hole transport as revealed by the ultraviolet photoelectron spectroscopy (UPS), steady-state photoluminescence (PL), and time-resolved photoluminescence (TRPL) data. When the concentration of Co-CuGaO2 NCs solution is set to 7.5 mg mL(-1), the device exhibits a best PCE of 20.39% and maintains 84.34% of the initial power conversion efficiency (PCE) after stored 30 days under air atmosphere with 15 +/- 5% humidity. (C) 2021 Elsevier Inc. All rights reserved.

Automated summary

The use of Co-CuGaO2 nanocrystals synthesized by hydrothermal method as inorganic materials to modify the interface can effectively enhance the performance and stability of perovskite solar cells. The Co-CuGaO2 fully covering the surface of PVK helps prevent direct contact between PVK and oxygen and moisture, leading to better hole transport and improved device efficiency.