相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped β-Ga2O3 crystals
Rujun Sun et al.
APPLIED PHYSICS LETTERS (2020)
Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
M. E. Ingebrigtsen et al.
APL MATERIALS (2019)
Surface related tunneling leakage in β-Ga2O3 (001) vertical Schottky barrier diodes
Ravikiran Lingaparthi et al.
APPLIED PHYSICS EXPRESS (2019)
Defects at the surface of β-Ga2O3 produced by Ar plasma exposure
A. Y. Polyakov et al.
APL MATERIALS (2019)
Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation
Chia-Hung Lin et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Dry and wet etching for ?-Ga2O3 Schottky barrier diodes with mesa termination
Hironori Okumura et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Deep donors and acceptors in β-Ga2O3 crystals: Determination of the Fe2+/3+ level by a noncontact method
C. A. Lenyk et al.
JOURNAL OF APPLIED PHYSICS (2019)
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes
Chandan Joishi et al.
APPLIED PHYSICS EXPRESS (2018)
Iron and intrinsic deep level states in Ga2O3
M. E. Ingebrigtsen et al.
APPLIED PHYSICS LETTERS (2018)
Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage > 1 kV
Zongyang Hu et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Effects of fluorine incorporation into beta-Ga2O3
Jiangcheng Yang et al.
JOURNAL OF APPLIED PHYSICS (2018)
A survey of acceptor dopants for beta-Ga2O3
John L. Lyons
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
Acceptor doping of beta-Ga2O3 by Mg and N ion implantations
Man Hoi Wong et al.
APPLIED PHYSICS LETTERS (2018)
Self-trapped holes in β-Ga2O3 crystals
B. E. Kananen et al.
JOURNAL OF APPLIED PHYSICS (2017)
Inductively coupled plasma reactive-ion etching of β-Ga2O3: Comprehensive investigation of plasma chemistry and temperature
Amit P. Shah et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2017)
Annealing of dry etch damage in metallized and bare (-201) Ga2O3
Jiancheng Yang et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)
Migration mechanisms and diffusion barriers of vacancies in Ga2O3
Alexandros Kyrtsos et al.
PHYSICAL REVIEW B (2017)
Inductively coupled plasma etching of bulk, single-crystal Ga2O3
Jiancheng Yang et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Kelson D. Chabak et al.
APPLIED PHYSICS LETTERS (2016)
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Z. Zhang et al.
APPLIED PHYSICS LETTERS (2016)
Chlorine-based dry etching of β-Ga2O3
Jack E. Hogan et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Recent progress in Ga2O3 power devices
Masataka Higashiwaki et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy
Tran Thien Duc et al.
PHYSICAL REVIEW B (2016)
Homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy
Hisashi Murakami et al.
Applied Physics Express (2015)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides
J. B. Varley et al.
PHYSICAL REVIEW B (2012)
Oxygen vacancies and donor impurities in β-Ga2O3
J. B. Varley et al.
APPLIED PHYSICS LETTERS (2010)
Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy
H. Ashraf et al.
JOURNAL OF APPLIED PHYSICS (2010)
Deep levels induced by reactive ion etching in n- and p-type 4H-SiC
Koutarou Kawahara et al.
JOURNAL OF APPLIED PHYSICS (2010)
Reactive ion etching of dielectrics and silicon for photovoltaic applications
Prakash N. K. Deenapanray et al.
PROGRESS IN PHOTOVOLTAICS (2006)
Hybrid functionals based on a screened Coulomb potential (vol 118, pg 8207, 2003)
Jochen Heyd et al.
JOURNAL OF CHEMICAL PHYSICS (2006)
Temperature dependence of reverse-bias leakage current in GaN Schottky diodes as a consequence of phonon-assisted tunneling
P. Pipinys et al.
JOURNAL OF APPLIED PHYSICS (2006)
Minority carrier lifetime properties of reactive ion etched p-type float zone Si
PNK Deenapanray et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2005)
Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy
EJ Miller et al.
APPLIED PHYSICS LETTERS (2004)
Hybrid functionals based on a screened Coulomb potential
J Heyd et al.
JOURNAL OF CHEMICAL PHYSICS (2003)
A climbing image nudged elastic band method for finding saddle points and minimum energy paths
G Henkelman et al.
JOURNAL OF CHEMICAL PHYSICS (2000)