相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。High temperature isotropic and anisotropic etching of silicon carbide using forming gas
C. D. Frye et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2021)
Hard X-ray and γ-ray spectroscopy at high temperatures using a COTS SiC photodiode
C. S. Bodie et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (2021)
Improved performance of SiC radiation detector based on metal-insulator-semiconductor structures
Yuping Jia et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (2021)
Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250μm epitaxial layers
Joshua W. Kleppinger et al.
JOURNAL OF APPLIED PHYSICS (2021)
First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC
Xiaolan Yan et al.
JOURNAL OF APPLIED PHYSICS (2020)
Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals
Matthias Arzig et al.
JOURNAL OF CRYSTAL GROWTH (2020)
Thermal and radiation response of 4H-SiC Schottky diodes with direct-write electrical contacts
Neil R. Taylor et al.
APPLIED PHYSICS LETTERS (2020)
Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z1/2 and EH6/7 deep defects
Sandeep K. Chaudhuri et al.
JOURNAL OF APPLIED PHYSICS (2020)
Charge collection efficiency in the presence of non-uniform carrier drift mobilities and lifetimes in photoconductive detectors
S. O. Kasap et al.
JOURNAL OF APPLIED PHYSICS (2020)
Thick 4H-SiC Epitaxial Detectors for High-Resolution Radiation Detection in Harsh Environment
Joshua W. Kleppinger et al.
HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XXII (2020)
Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
Takuma Kobayashi et al.
JOURNAL OF APPLIED PHYSICS (2019)
Threshold displacement energies and displacement cascades in 4H-SiC: Molecular dynamic simulations
Weimin Li et al.
AIP ADVANCES (2019)
Silicon Carbide Microstrip Radiation Detectors
Donatella Puglisi et al.
MICROMACHINES (2019)
Reduction of morphological defects in 4H-SiC epitaxial layers
Yun Li et al.
JOURNAL OF CRYSTAL GROWTH (2019)
Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes
V. V. Kozlovski et al.
JOURNAL OF APPLIED PHYSICS (2018)
Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress
Piyas Samanta et al.
JOURNAL OF APPLIED PHYSICS (2017)
Characterization of silicon carbide and diamond detectors for neutron applications
M. Hodgson et al.
MEASUREMENT SCIENCE AND TECHNOLOGY (2017)
Development of high sensitivity 4H-SiC detectors for fission neutron pulse shape measurements
Jian Wu et al.
REVIEW OF SCIENTIFIC INSTRUMENTS (2017)
Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing Studies
Mohammad A. Mannan et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2016)
High resolution alpha particle detectors based on 4H-SiC epitaxial layer
B. Zat'ko et al.
JOURNAL OF INSTRUMENTATION (2015)
Defects as qubits in 3C- and 4H-SiC
L. Gordon et al.
PHYSICAL REVIEW B (2015)
Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors
Krishna C. Mandal et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2014)
Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies
Mohammad A. Mannan et al.
JOURNAL OF APPLIED PHYSICS (2014)
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers
L. Gelczuk et al.
SOLID-STATE ELECTRONICS (2014)
Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy
G. Alfieri et al.
APPLIED PHYSICS LETTERS (2013)
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach
Sandeep K. Chaudhuri et al.
APPLIED PHYSICS LETTERS (2013)
Silicon carbide detector for laser-generated plasma radiation
Giuseppe Bertuccio et al.
APPLIED SURFACE SCIENCE (2013)
Characterizing the Timing Performance of a Fast 4H-SiC Detector With an 241Am Source
Xiaodong Zhang et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2013)
Thermal conductivity of 4H-SiC single crystals
Rusheng Wei et al.
JOURNAL OF APPLIED PHYSICS (2013)
Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles
S. K. Chaudhuri et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (2013)
High resolution alpha particle detection using 4H-SiC epitaxial layers: Fabrication, characterization, and noise analysis
Sandeep K. Chaudhuri et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (2013)
Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers
S. I. Maximenko et al.
JOURNAL OF APPLIED PHYSICS (2010)
SRIM - The stopping and range of ions in matter (2010)
James F. Ziegler et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2010)
Optically Activated 4H-SiC p-i-n Diodes for High-Power Applications
Feng Zhao et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers
Katsunori Danno et al.
JOURNAL OF APPLIED PHYSICS (2007)
The effects of large signals on charge collection in radiation detectors: Application to amorphous selenium detectors
M. Zahangir Kabir et al.
JOURNAL OF APPLIED PHYSICS (2006)
High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors
Frank H. Ruddy et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006)
High-temperature deep level transient spectroscopy on As-grown P-type 4H-SiC epilayers
K Danno et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2006)
Morphological features related to micropipe closing in 4H-SiC -: art. no. 034905
R Yakimova et al.
JOURNAL OF APPLIED PHYSICS (2005)
Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy -: art. no. 122104
K Danno et al.
APPLIED PHYSICS LETTERS (2005)
Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor
J Zhang et al.
JOURNAL OF APPLIED PHYSICS (2003)
Investigation of 4H-SiC Schottky diodes by ion beam induced charge (IBIC) technique
C Manfredotti et al.
APPLIED SURFACE SCIENCE (2001)
Electrical transport in n-type 4H silicon carbide
J Pernot et al.
JOURNAL OF APPLIED PHYSICS (2001)