Enhanced temperature stable dielectric response and high dielectric strength observed in (CaZr)0.65(SrTi)0.35O3 thin film

Crystalline (CaZr)(0.65)(SrTi)(0.35)O-3 (CSZT) thin film was prepared on Pt/SiO2/Si substrate by using RF-magnetron sputtering. The XRD result shows that the CSZT thin film has an orthorhombic perovskite structure. The uniform, dense and crake-free cross-section morphology and surface morphology of CSZT thin film are verified by Scanning electron microscope (SEM) and Atomic force microscope (AFM), respectively. The dielectric response depends on frequency, voltage and temperature were investigated experimentally. A record-small temperature coefficient of capacitance (TCC), similar to -23.3 ppm/degrees C, is achieved ranging from -55-205 degrees C in the (CaZr)(0.65)(SrTi)(0.35)O-3 thin films. All the prepared (CaZr)(0.65)(SrTi)(0.35)O-3 thin films show a very low leakage current density of 1.1 x 10(-7) A/cm(2) at the bias voltage of 80 V(0.88 MV/cm) at room temperature and also an enhanced dielectric constant (epsilon(r)similar to 56.4) and a low tan delta of 0.003 at 1 MHz. The results show that the (CaZr)(0.65)(SrTi)(0.35)O-3 thin film should be a great potential thin film material for advanced thin film capacitor applications. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

The study involved the preparation of (CaZr)(0.65)(SrTi)(0.35)O-3 (CSZT) thin film with superior structural and performance characteristics, suitable for advanced thin film capacitor applications.