Synthesis and thermoelectric properties of high-entropy half-Heusler MFe1-xCoxSb (M = equimolar Ti, Zr, Hf, V, Nb, Ta)

The application of the high-entropy concept has generated many interesting results for both alloys and ceramics. However, there are very few reports on high entropy thermoelectric materials. In this work, a single phase high-entropy half-Heusler compound MFe1-xCoxSb with 6 equimolar elements (Ti, Zr, Hf, V, Nb and Ta) on the M site was successfully synthesized by a simple method of mechanical alloying, and the single phase was maintained after densification by spark plasma sintering. The multi-elements are homogenously distributed in the samples. The samples are stable and there is no phase separation after annealing at 1073 K in argon for 72 h, which could be attributed to their high configurational entropy. Due to the phonon scattering introduced by multi-elements, the lattice thermal conductivity is largely sup-pressed with a lowest value of similar to 1.8-1.5 Wm(-1)K(-1) (300-923 K) for MCoSb. By adjusting the Fe/Co ratio, the samples can show both n-type and p-type semiconductor behavior. Maximum zT values of 0.3 and 0.25 are achieved for n-type MCoSb and p-type MFe0.6Co0.4Sb, respectively. The results suggest that the high-entropy concept is a promising strategy to extend the composition range and tune the thermoelectric properties for half-Heusler materials, which could potentially be applied in other thermoelectric materials. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

The successful synthesis of a single-phase high-entropy half-Heusler compound through mechanical alloying and spark plasma sintering allows for a homogeneous distribution of multiple elements in the samples. The stability of the samples, as well as the ability to exhibit both n-type and p-type semiconductor behavior by adjusting the Fe/Co ratio, indicate the promising potential of the high-entropy concept in extending composition range and tuning thermoelectric properties for half-Heusler materials.