4.7 Article

IP and OOP ferroelectricity in hexagonal γ-In2Se3 nanoflakes grown by chemical vapor deposition

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 870, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.159344

关键词

gamma-In2Se3; Chemical vapour deposition; Ferroelectric response; Raman spectroscopy; Second harmonic generation; Piezoforce microscopy

资金

  1. Key-Area Research and Development Program of Guangdong Provance, China [2020B010170002]
  2. Guangdong Natural Science Fund, China [2019A1515012164]
  3. University of Hong Kong, Hong Kong [201902159003]

向作者/读者索取更多资源

This study demonstrates the successful catalyst-free CVD growth of beta and gamma phase In2Se3 flakes with thicknesses down to only a few nanometers, and thoroughly investigates their structural, optical, and ferroelectric properties. The observation of ferroelectricity in gamma-In2Se3 without the need for a catalyst could be a valuable addition in the field of ferroelectric and piezoelectric switching devices.
Indium selenide (In2Se3) has got much recent attraction in a variety of research areas mainly due to its multiphase structure. Many existing studies, however, have focused on growth of alpha and beta phase, while chemical vapor deposition (CVD) growth of the gamma-phase has only been achieved for micon-thick flakes with the assistance of iodine trichloride (ICl3) catalysts. Here, we present the catalyst-free; CVD growth of beta and gamma phase In2Se3 flakes with thicknesses down to only a few nanometers. The structural, optical and ferroelectric properties of the grown samples were investigated carefully by using various techniques. Optical microscope and Raman spectroscopy studies revealed that triangular and hexagonal shaped beta and gamma phases were grown at different substrate temperatures, respectively. The second-harmonic generation (SHG) measurement confirmed that beta has centrosymmetric structure and gamma phase has non-centrosymmetric structure. The ferroelectric properties of the gamma-In2Se3 were measured along in-plane (IP) and out-of-plane (OOP) directions, for the first time, by employing piezo-force microscope (PFM). The non-monotonic thickness dependence of the ferroelectricity was found and explained with the combination of Raman and SHG measurements. The catalyst-free growth of gamma-In2Se3 and the observation of ferroelectricity in it would be a valuable addition in the field of ferroelectric and piezoelectric switching devices. (C) 2021 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据