Thickness dependent anomalous Hall effect in noncollinear antiferromagnetic Mn3Sn polycrystalline thin films

The Weyl antiferromagnet Mn3Sn has been recently attracting considerable attention due to its unique properties like a large anomalous Hall effect (AHE). To gain AHE in thin enough Mn3Sn film is urgently desired for its application in antiferromagnetic spintronics. Here, we investigated the variation of AHE with thickness of Mn3Sn films. We obtained a large AHE for Mn3Sn film as thin as 20 nm, and found the AHE is dependent on the relative crystalline for different thick samples. The phase diagram of Mn3Sn films having AHE that annealed at different temperatures with different thicknesses was acquired. Moreover, the current-induced AFM state switching was implemented in Mn3Sn (20 nm)/Pt (4 nm) sample. Our finding would pave the path for developing antiferromagnetic spintronics. (c) 2021 Elsevier B.V. All rights reserved.

Automated summary

Research shows that even thin Mn3Sn films as thin as 20 nm exhibit a significant anomalous Hall effect, which varies depending on the relative crystalline structure of different thickness samples. Additionally, a phase diagram of the AHE in Mn3Sn films annealed at different temperatures with different thicknesses was obtained, and current-induced antiferromagnetic state switching was achieved in Mn3Sn (20 nm) / Pt (4 nm) samples. These findings could potentially advance the development of antiferromagnetic spintronics.