Optical and oxide modification of CsFAMAPbIBr memristor achieving low power consumption

Due to its unique I-V property, memristor is considered to be the key device for artificial intelligence application. Among the alternative memristor materials, organometal trihalide perovskite (OTP) follow with interest in photoelectric coupling area with excellent light absorption ability. However, the power consumption of OTP memristor still remains to be reduced. Here, Cs-0.05(FA(x)MA(1-x))(0.)95PbIyBr3-y (CsFAMAPbIBr) with prominent photoresponse property is used as the functional layer of the memristor. Maximum high resistance state (HRS)/low resistance state (LRS) (similar to 100) and maximum power of 9.8 x 10(-9) W is reached under small voltage (-1 V similar to 1 V) with W/OTP/Al structure. Since the oxide modification layer acts as a series resistance for the device, when 90 nm thickness of zinc oxide layer is added to the W/OTP interface, the power consumption of the device is reduced by an order of magnitude. Then, the maximum power of the device decreases by two orders of magnitude (to 2.5 x 10(-11) W) under 2 mW/cm(2) light condition, and the phenomenon called negative photoconductance (NPC) effect that defined as an increase in resistance upon exposure to illumination. Through the optical and oxide modification, OTP memristor with low power consumption is achieved. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

This study utilized CsFAMAPbIBr as the functional layer of the memristor and successfully reduced the power consumption of OTP memristor by optical and oxide modification, achieving a low-power OTP memristor.