4.7 Article

Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 892, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.162069

关键词

electrochemical etching; nanoporous GaN array; Lu2O3:Eu film; PL intensity; PLD

资金

  1. National Natural Science Foundation of China [61874067]
  2. Key Research and Development Plan of Shandong Province, China [2018GGX102024]
  3. Natural Science Foundation of Shandong Province, China [ZR2019MF042]

向作者/读者索取更多资源

The vertical-oriented nanoporous GaN film prepared by electrochemical etching and annealing, combined with Lu2O3:Eu film, can improve light extraction efficiency. The scattering effects and light coupling have a significant impact on the photoluminescence intensity.
To improve the efficiency of light extraction, the vertical-oriented nanoporous (NP) GaN film as scattering medium as well as light-coupling component was prepared by electrochemical (EC) etching followed by annealing process. The Lu2O3:Eu film as fluorescence medium was deposited on the NP-GaN substrate via pulse laser deposition (PLD) method, which has out-of-plane epitaxial relationship of Lu2O3 (222) parallel to GaN (0002). By changing etching and annealing conditions, the average pore diameter, pore density and pore sidewall roughness of NP-GaN are controlled. The experiment shows that the photoluminescence (PL) intensities and quantum efficiencies of epitaxial films are related to the pore density and sidewall roughness of NP-GaN substrates. Due to the scattering effect of nanopores and light-coupling inside Lu2O3:Eu films on the NP-GaN substrates, the PL intensities were enhanced 13-96% compared with that of the films on as grown GaN substrates, although the crystal quality of the epitaxial film becomes worse with the increase of porosity of the substrates. (C) 2021 Elsevier B.V. All rights reserved.

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