期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 870, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.159527
关键词
Nitrogen-doped graphene quantum dots; Quantum dot-sensitized solar cells; Successive ionic layer adsorption and reaction; Charge recombination; Electron lifetime
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2018R1D1A3B05042787]
- Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) from the Ministry of Trade, Industry & Energy, Republic of Korea [20204010600100]
Nitrogen-doped graphene quantum dots (N-GQDs) play a crucial role in enhancing the performance of quantum dot-sensitized solar cells by boosting light absorption, facilitating electron transportation, and suppressing charge recombination, leading to a significantly improved power conversion efficiency.
Nitrogen-doped graphene quantum dots (N-GQDs) synthesized by a hydrothermal method were incorporated into TiO2 mesoporous films to boost the photovoltaic performance of quantum dot-sensitized solar cells (QDSSCs). Cadmium selenide quantum dots (CdSe QDs) were then deposited on the N-GQDsincorporated TiO2 films using a successive ionic layer adsorption and reaction (SILAR) technique. The NGQDs serve multiple functions for enhancing light-harvesting, facilitating electron transportation, and suppressing charge recombination. The non-zero gap N-GQDs both generate excitons as co-sensitizer and provide more adsorption sites for CdSe QDs. Furthermore, the N-GQDs provide efficient electron pathways between TiO2 nanoparticles and passivate the surface defects, giving rise to a high electron diffusion coefficient and long electron lifetime. The resulting QDSSC with the N-GQDs showed significantly improved power conversion efficiency (4.88%) compared to the QDSSC (3.92%) without N-GQDs. (C) 2021 Elsevier B.V. All rights reserved.
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