Charge density wave transitions in mechanically-exfoliated NbSe3 devices

We studied charge density wave (CDW) transitions in NbSe3 devices with thicknesses t from 20 to 170 nm, fabricated by the mechanical exfoliation technique. NbSe3 exhibits two CDW transitions: one is the linear nesting (CDW1) below T-1 approximate to 140 K and the other is the diagonal nesting (CDW2) below T-2 approximate to 60 K. For both the transitions, clear resistivity changes were observed down to t = 20 nm, indicating that the CDW states are robust even for the thin NbSe3 devices. The result also suggests that surface acoustic waves could be useful to modulate the CDW in the NbSe3 devices. (C) 2021 The Japan Society of Applied Physics

Automated summary

The study found that CDW transitions in NbSe3 devices exhibit good stability, with clear resistivity changes observed even in thinner devices. This suggests that surface acoustic waves could be useful for modulating CDW states in NbSe3 devices.