期刊
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS
卷 50, 期 1, 页码 183-196出版社
WILEY
DOI: 10.1002/cta.3136
关键词
digital active gate drive; EMI; fast switching; SiC MOSFET; surge voltage; switching trajectory
资金
- Cross-ministerial Strategic Innovation Promotion Program (SIP), Energy systems of an Internet of Energy (IoE) society (Funding agency: JST)
- Japan Society for the Promotion of Science [20H02151]
- Nissin Electric Group Foundation for Social Contribution
- Program on Open Innovation Platform with Enterprises, Research Institute and Academia of Japan Science and Technology Agency
- Grants-in-Aid for Scientific Research [20H02151] Funding Source: KAKEN
The paper proposes a digital active gate driver for SiC power MOSFETs, which can achieve high-frequency switching while avoiding surge voltage and ringing; By designing a multibit gate signal sequence, the gate-source voltage waveform of the MOSFET can be flexibly generated.
In this paper, a digital active gate driver for SiC power MOSFETs is proposed. High-frequency switching with SiC power MOSFETs can realize an integrated power circuit with higher power density. However, the large surge voltage and ringing caused by the fast switching will lose the reliability of the device and increase electromagnetic interference (EMI) problems. To achieve high-frequency switching without these drawbacks, an active gate driver based on the architecture of a digital-to-analog converter has been designed. The gate-source voltage waveform of the MOSFET is generated directly and flexibly by a multibit gate signal sequence, considering the device characteristics and a variety of circuit conditions. Effective gate signal sequences are investigated by focusing on the switching trajectory on the state space of the device, which is discretely controlled through successive transitions between operating points. Experimental and simulated results confirm that the proposed gate driver effectively suppresses and regulates the surge voltage and ringing during turn-off.
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