4.4 Article

Analysing and measuring the performance of memristive integrating amplifiers

期刊

出版社

WILEY
DOI: 10.1002/cta.3101

关键词

hybrid CMOS; memristor circuit; high sensitivity; integrating amplifier; neural spike detection; threshold detection

资金

  1. Engineering and Physical Sciences Research Council [EP/R024642/1]
  2. Engineering and Physical Sciences Research Council (EPSRC)
  3. Royal Society Industry Fellow PhD Student Scholarship
  4. EPSRC [EP/R024642/1] Funding Source: UKRI

向作者/读者索取更多资源

This study introduces a fully differential, two-stage, integrating pre-amplifier for amplifying and digitizing neural signals, with a focus on alternative definitions for key performance metrics. The amplification process is analyzed through investigating transient behavior during the integration phase, providing insights and design trade-offs for the memristor-based integrating amplifier.
Recording reliably extracellular neural activities is an essential prerequisite for the development of bioelectronics and neuroprosthetic applications. Recently, a fully differential, two-stage, integrating pre-amplifier was proposed for amplifying and then digitising neural signals. The amplifier featured a finely tuneable offset that was used as a variable threshold detector. Given that the amplifier is integrating, the DC operating point keeps changing during integration, rendering traditional analysis (AC/DC) unsuitable. In this work, we analyse the operation of this circuit and propose alternative definitions for validating the necessary key performance metrics, including gain, bandwidth, offset tuning range and offset sensitivity with respect to the memory states of the employed memristors. The amplification process is analysed largely through investigating the transient behaviour during the integration phase. This benchmarking approach is finally leveraged for providing useful insights and design trade-offs of the memristor-based integrating amplifier.

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