Highly reliable THz hermetic detector based on InGaAs/InP Schottky barrier diode

We demonstrate on n-InGaAs/n+-InP hetero-epitaxial structure based low-barrier Schottky barrier diode with integrated antenna for broadband THz detection. These devices showed refined and uniform nonlinear rectifying characteristics. Based on this device, a compact and robust hermetic packaged module was fabricated. The developed module showed stable and consistent electrical characteristics even in mechanical/vibration shock and abrupt change of temperature. The detection performance of module was characterized by frequency domain spectroscopy system, and as a result, it had a detectable bandwidth of 0.1-0.8 THz, a voltage responsivity of 320 V/W, and noise equivalent power of 3.1.10-9 W/Hz0.5 at 300 GHz.

Automated summary

A low-barrier Schottky barrier diode with integrated antenna for broadband THz detection, based on an n-InGaAs/n+-InP hetero-epitaxial structure, showed refined and uniform nonlinear rectifying characteristics. A compact and robust hermetic packaged module was fabricated using this device, with stable and consistent electrical characteristics even in mechanical/vibration shock and abrupt temperature changes. The detection performance of the module, characterized by frequency domain spectroscopy system, showed a detectable bandwidth of 0.1-0.8 THz, a voltage responsivity of 320 V/W, and noise equivalent power of 3.1.10-9 W/Hz0.5 at 300 GHz.