A Radiation-Hardened CMOS Full-Adder Based on Layout Selective Transistor Duplication

Single event transients (SETs) have become increasingly problematic for modern CMOS circuits due to the continuous scaling of feature sizes and higher operating frequencies. Especially when involving safety-critical or radiation-exposed applications, the circuits must be designed using hardening techniques. In this brief, we present a new radiation-hardened-by-design full-adder cell on 45-nm technology. The proposed design is hardened against transient errors by selective duplication of sensitive transistors based on a comprehensive radiation-sensitivity analysis. Experimental results show a 62% reduction in the SET sensitivity of the proposed design with respect to the unhardened one. Moreover, the proposed hardening technique leads to improvement in performance and power overhead and zero area overhead with respect to the state-of-the-art techniques applied to the unhardened full-adder cell.

Automated summary

In this study, a new radiation-hardened-by-design full-adder cell on 45-nm technology was proposed, which reduced SET sensitivity through selective duplication of sensitive transistors and improved performance and power overhead. Experimental results showed a 62% reduction in SET sensitivity compared to the unhardened design.