期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 36, 期 6, 页码 6168-6174出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2020.3035030
关键词
MOSFET; Stress; Switches; Modulation; Rectifiers; Virtual private networks; Low voltage; High-efficiency; low voltage stress; three-phase buck rectifier (3ph-BR)
资金
- National Natural Science Foundation of China [61733015]
An improved three-phase buck rectifier (3ph-BR) is proposed to reduce the voltage stress on switching devices such as MOSFETs. The proposed design allows for the use of cost-efficient and low voltage rating MOSFETs with low on-resistance, making it suitable for high-efficiency and high-density applications. A 1.5-kW experimental prototype is built to verify the analysis results.
An improved three-phase buck rectifier (3ph-BR) with low voltage stress on switching devices is proposed in this letter. In the conventional 3ph-BR, the voltage stress on MOSFET s is higher than the amplitude of input phase voltage. However, in the proposed 3ph-BR, the voltage stress on MOSFET s is lower than the amplitude of input phase voltage, which results in reduction of voltage stress on MOSFET s. Therefore, the cost-efficient and low voltage rating MOSFET s with low on-resistance can be utilized, which makes the proposed 3ph-BR suitable for applications that require high-efficiency and high-density. A 1.5-kW experimental prototype of the proposed rectifier is built to verify the analysis results.
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