期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 36, 期 8, 页码 8565-8569出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2021.3049966
关键词
Gallium oxide (Ga2O3); package; ruggedness; surge current; simulation; thermal management; ultrawide bandgap (UWBG)
资金
- Center for Power Electronics Systems (CPES) High Density Integration Industry Consortium at Virginia Tech
This study presents the first experimental demonstrations of surge current capabilities of large-area Ga2O3 Schottky barrier diodes (SBDs) packaged in different configurations, showing high surge current capabilities of properly packaged Ga2O3 SBDs.
Ultrawide-bandgap gallium oxide (Ga2O3) devices have recently emerged as promising candidates for power electronics; however, the low thermal conductivity (k(T)) of Ga2O3 causes serious concerns about their electrothermal ruggedness. This letter presents the first experimental demonstrations of large-area Ga2O3 Schottky barrier diodes (SBDs) packaged in the bottom-side-cooling and double-side-cooling configurations, and for the first time, characterizes the surge current capabilities of these packaged Ga2O3 SBDs. Contrary to popular belief, Ga2O3 SBDs with proper packaging show high surge current capabilities. The double-side-cooled Ga2O3 SBDs with a 3 x 3-mm(2) Schottky contact area can sustain a peak surge current over 60 A, with a ratio between the peak surge current and the rated current superior to that of similarly-rated commercial SiC SBDs. The key enabling mechanisms for this high surge current are the small temperature dependence of on-resistance, which strongly reduces the thermal runaway, and the double-side-cooled packaging, in which the heat is extracted directly from the Schottky junction and does not need to go through the low-k(T) bulk Ga2O3 chip. These results remove some crucial concerns regarding the electrothermal ruggedness of Ga2O3 power devices and manifest the significance of their die-level thermal management.
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