期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 68, 期 7, 页码 1430-1435出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2021.3079846
关键词
MOSFET; Ions; Epitaxial growth; Silicon carbide; Doping; Power system measurements; Density measurement; Diode; heavy ion; MOSFET; power; silicon carbide (SiC); single-event burnout (SEB)
资金
- NASA ESI Program [NNX17AD09G]
- NEPP Program at NASA Goddard
- NASA [1003281, NNX17AD09G] Funding Source: Federal RePORTER
Thicker and lightly doped epitaxial region significantly increases the threshold at which ion-induced SEB occurs in SiC power MOSFETs and JBS diodes. Using a 3300V power MOSFET provides a significant increase in SEB threshold margin compared to a 1200V MOSFET, with minor impact on power dissipation during normal operation.
Ion- and terrestrial neutron-induced single-event burnout (SEB) data indicate that a thicker, more lightly doped epitaxial (epi) region significantly increases the threshold at which ion-induced SEB occurs in silicon carbide (SiC) power MOSFETs and junction barrier Schottky (JBS) diodes. Simulations indicate that the reduction of power dissipation along the core of the ion track is responsible for the increased robustness of the devices that have higher breakdown voltage ratings. Implications for circuit design show that using a 3300-V power MOSFET provides a significant increase in SEB threshold margin compared to a 1200-V MOSFET, with minor impact on power dissipation during normal operation.
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