Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions

The electrical degradation in AlGaN/GaN high-electron-mobility transistors (HEMTs) is examined under irradiation with 7.6-MeV carbon (C), 20-MeV oxygen (O), and 30-MeV fluorine (F) ions in situ. To characterize the radiation damage in the HEMTs, the ionizing dose D-i, displacement dose D-d, and number of vacancies versus the chip depth in the devices have been calculated for heavy ions. As expected, in all three types of HEMTs, the output current decreases more than 30% and threshold voltage positive shifts after the irradiation fluence of 4 x 10(12) ions/cm(2). The performance degradation of AlGaN/GaN HEMTs is caused by radiation-induced charged defects. Based on calculation and experimental results, it is shown that the nonionizing energy loss (NIEL) method is not suitable for estimating the degradation of AlGaN/GaN HEMTs either considering gallium vacancy or considering both gallium vacancy and nitrogen vacancy. In the same displacement damage dose, the threshold voltage degradation rate depends on the type of incident particles and independent of the channel length. The damage caused by carbon ions is the smallest and the damage caused by fluoride ions is the largest.

Automated summary

The study examined the electrical degradation in AlGaN/GaN HEMTs under irradiation with carbon, oxygen, and fluorine ions. Results showed that the output current and threshold voltage of HEMTs significantly decreased after a certain ion fluence, indicating radiation-induced performance degradation.