相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs
Naoya Miyashita et al.
JOURNAL OF APPLIED PHYSICS (2019)
Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices
Matthew M. Wilkins et al.
JOURNAL OF PHOTONICS FOR ENERGY (2017)
High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique
Antti Tukiainen et al.
PROGRESS IN PHOTOVOLTAICS (2016)
Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells
Ville Polojarvi et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2016)
Effect of electron and proton irradiation on recombination centers in GaAsN grown by chemical beam epitaxy
Boussairi Bouzazi et al.
CURRENT APPLIED PHYSICS (2013)
Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers
E. -M. Pavelescu et al.
JOURNAL OF LUMINESCENCE (2013)
Change in the electrical performance of GaAs solar cells with InGaAs quantum dot layers by electron irradiation
T. Ohshima et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2013)
Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications
K. Volz et al.
JOURNAL OF CRYSTAL GROWTH (2008)
1 MeV electron irradiation influence on GaAs solar cell performance
B. Danilchenko et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2008)
Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN
Aurangzeb Khan et al.
APPLIED PHYSICS LETTERS (2007)
Correlation of nitrogen related traps in InGaAsN with solar cell properties
Aurangzeb Khan et al.
APPLIED PHYSICS LETTERS (2007)
Correlation of electron radiation induced-damage in GaAs solar cells
Jeffrey H. Warner et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006)
Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
EM Pavelescu et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Thermal annealing effects and local atomic configurations in GaInNAs thin films
K Uno et al.
JOURNAL OF CRYSTAL GROWTH (2005)
III-N-V semiconductors for solar photovoltaic applications
JF Geisz et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2002)
Deep levels and their impact on generation current in Sn-doped InGaAsN
RJ Kaplar et al.
JOURNAL OF APPLIED PHYSICS (2001)
Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells
RJ Kaplar et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2001)
Nitrogen solubility and induced defect complexes in epitaxial GaAs:N
SB Zhang et al.
PHYSICAL REVIEW LETTERS (2001)
分享论文
