期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 68, 期 8, 页码 1694-1700出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2021.3068044
关键词
Radiation effects; Degradation; Photovoltaic cells; Computer architecture; Microprocessors; Gallium arsenide; Temperature measurement; Deep-level transient spectroscopy (DLTS); degradation; dilute nitrides; electrons; external quantum efficiency (EQE); InGaAsN; irradiation; multijunction solar cell (MJSC); photoluminescence (PL); solar cell
资金
- LAAS-CNRS micro and nanotechnologies platform (a member of the French RENATECH Network)
- CNES [R-S19/MT-9999-245]
- LAAS-CNRS PROOF platform (Occitanie Region)
- French Program Investments for the Future [ANR-10-LABX-22-01-SOLSTICE]
Experimental results show that the InGaAsN p-i-n subcell retains over 94% of its original photocurrent after 1-MeV electron irradiation at 10^15 cm^(-2). Furthermore, there is no significant degradation in optoelectronic properties observed after irradiation.
The degradation of InGaAsN p-i-n subcell under 1-MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94% of their original photocurrent after 10(15) cm(-2), 1-MeV electron irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.
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