期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 68, 期 8, 页码 3991-3996出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3091548
关键词
Beta gallium oxide (beta-Ga2O3); fast recovery; heterojunction; interface recombination; nickel oxide (NiO); p-n diode; trap-assisted tunneling
资金
- Guangdong Basic and Applied Basic Research Foundation [2019A1515012160]
- Sun-Yatsen University (SYSU) Fundamental Research Funds for the Central Universities [191gpy83]
In this work, a high-performance vertical NiO/beta-Ga2O3 heterojunction p-n diode was successfully fabricated, showing high breakdown voltage and low specific ON-resistance. Through optimized fabrication process, superior performance was achieved, contributing significantly to the development of power devices.
This work presents the fabrication and characterization of a high-performance vertical Nickel oxide (NiO)/Beta gallium oxide (beta-Ga2O3) heterojunction p-n diode. The heterojunction was fabricated by sputtering a p-NiO thin film onto an epitaxial n(-)-beta-Ga2O3 drift layer. The sputtered NiO, revealed to be polycrystalline, showed an improved crystallinity after annealed in an oxygen ambient, while a seamless contact with the underneath single crystalline beta-Ga2O3 was observed. A high hole concentration of 1-3 x 10(19) cm(-3) and an improved Ohmic contact were also obtained by the annealing process, as confirmed by the Hall and TLM measurements, respectively. A high breakdown voltage (V-B) of 1.4 kV and a low specific ON-resistance (R-on,R- sp) of 2.7 m Omega.cm(2) were simultaneously achieved for the fabricated diodes, yielding a superior Baliga's figure-of-merit (BFoM) of 0.73 GW/cm(2). From the temperature-dependent current-voltage (I-V) measurements, two carrier transport mechanisms, namely interface recombination and multistep tunneling, have been identified in the forward conduction of the NiO/beta-Ga2O3 heterojunction. The fast recovery property of the device, which was revealed by a double-pulse test, further confirmed the purposed carrier transport mechanisms.
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