Boron-Doped Diamond MOSFETs With High Output Current and Extrinsic Transconductance

Boron-doped diamond (B-diamond) metal-oxide-semiconductor (MOS) capacitor and MOS field-effect transistor (MOSFET) are fabricated on a flat diamond epitaxial layer. Their electrical properties and thermal stabilities after annealing at 500 degrees C are investigated. Annealing makes the leakage current density of the B-diamond MOS capacitor increase slightly. There is a larger stretch-out for the capacitance-voltage curve in the depletion region after annealing than that before annealing. The drain-current maxima for the as-fabricated and 500 degrees C-annealed MOSFETs are obtained as -0.49 and -0.60 mA/mm, respectively. Extrinsic transconductance maxima are 18.7 and 21.4 mu S/mm, respectively. These obtained values are considerably larger than those obtained by the previously reported B-diamond MOSFETs.

Automated summary

The electrical properties and thermal stabilities of boron-doped diamond (B-diamond) MOS capacitor and MOS field-effect transistor (MOSFET) on a flat diamond epitaxial layer were investigated after annealing at 500 degrees C. The annealing process slightly increased the leakage current density of the B-diamond MOS capacitor. The drain-current and extrinsic transconductance maxima of the MOSFETs also showed improvements after annealing compared to the as-fabricated state. These results are significantly better than previously reported B-diamond MOSFETs.