3-D Vertical via Nitrogen-Doped Aluminum Oxide Resistive Random-Access Memory

Resistive random-access memory (RRAM) with atomic layer deposited (ALD) nitrogen-doped aluminum oxide (AlOxNy) resistive dielectric appropriate for high-density 3-D vertical via array is demonstrated. With appropriate ALD electrodes, the RRAM exhibits almost forming-free, sub-microamperes programming currents, and appropriate resistance ranges. As the via size is scaled down, the set voltage and reset current decrease and the memory window widens, due to the 3-D nature of the device. Programming endurance of 5 x 10(4) cycles and retention up to 10 years at 90 degrees C are demonstrated.

Automated summary

Demonstrated is a resistive random-access memory (RRAM) utilizing nitrogen-doped aluminum oxide (AlOxNy) resistive dielectric deposited with atomic layer deposition (ALD), suitable for high-density 3-D vertical via array. The RRAM exhibits almost forming-free operation, sub-microamperes programming currents, and appropriate resistance ranges with ALD electrodes. As the via size scales down, the set voltage and reset current decrease, while the memory window widens due to the device's 3-D nature, showing programming endurance of 5 x 10(4) cycles and retention up to 10 years at 90°C.