Study of a GaN-Based Light-Emitting Diode With a Ga2O3 Current Blocking Layer and a Ga2O3 Surface Passivation Layer

A new device structure, which includes a Ga2O3 current blocking layer (CBL) and a Ga2O3 surface passivation layer (SPL), is used to fabricate a GaN-based light-emitting diode (LED). Due to the inherent properties of Ga2O3 material, the current spreading phenomenon can be effectively improved and the surface leakage current and Fresnel reflection can be remarkably reduced. The appropriate thicknesses of the Ga2O3 CBL and SPL, according to the results from series experiments, are 10 and 50 nm, respectively. In an experiment, under an injection current density of 100 A/cm(2), the studied LED device with a 10 nm-thick Ga2O3 CBL and a 50 nm-thick Ga2O3 SPL shows enhancements of 76.8%, 60.7%, 76.8%, and 56.2% in light output power (LOP), luminous efficacy, external quantum efficiency (EQE), and wall-plug efficiency, respectively, in comparison to a conventional LED without the designed structure. In addition, the studied LED exhibits obvious improvement in far-field radiation pattern compared to the conventional LED device. Thus, the studied structure, which includes an appropriate Ga2O3 CBL and SPL, offers a promising route to fabricate high-performance GaN-based LEDs.

Automated summary

The new device structure incorporating Ga2O3 current blocking and surface passivation layers significantly improves the performance of GaN-based LEDs. The appropriate thicknesses of Ga2O3 CBL and SPL lead to substantial enhancements in light output power and efficiency compared to conventional LEDs.