Dual-Functional Hybrid Selectorless RRAM and Selection Device for Memory Array Application

The dual-functional resistive random-access memories (RRAMs) are presented as the nonvolatile switching (NVS) memory and volatile threshold switching (VTS) devices by changing the operation polarities in the identical memory device. The built-in nonlinearity is demonstrated of similar to 10(2) inNVS for the selectorlessmemristor, and the selectivity is of similar to 10(3) in volatile switching for the selector device application. The crossbar array of HfOx/graphite stacks is implementing an improved read margin with nonvolatile selectorless unit. In comparison with current memory technology, the dual-functional hybrid selectorless memristor in this work is presented by low thermal budget, high ON-OFF ratio (similar to 10(2)), good self-selectivity in selectorless memory (similar to 10(2)), high selectivity in selection device (similar to 10(3)), and low switching voltage for both memory and selection devices. The dual-functional switching behaviors not only provide the effective ways to 3-D integration for storage class memory, but also for emerging computing paradigms such as in-memory computing and neuromorphic computing applications.

Automated summary

The study introduces a dual-functional resistive random-access memory (RRAM) that can serve as both nonvolatile switching and volatile threshold switching devices, with good nonlinearity, selectivity, and read margin.