Ultrathin Mg0.05Sn0.95Ox-Based Thin-Film Transistor by Mist Chemical Vapor Deposition

The 5-nm-thick Mg0.05Sn0.95Ox thin film deposited using mist chemical vapor deposition is used as a channel layer of the thin-film transistor (TFT). Mg0.05Sn0.95Ox improves the crystallinity, reduces the number of oxygen deficiencies, and enlarges the energy bandgap compared with SnO2. Mg0.05Sn0.95Ox-based TFT shows higher field-effect mobility (144.9 cm(2)V(-1)s(-1)), steeper subthreshold slope (134 mV/decade), and significant ON/OFF current ratio (>10(9)) than the SnO2-based TFT. Owing to fewer oxygen-related defects, wide energy bandgaps, and stable Mg-O chemical bonding, the Mg0.05Sn0.95Ox-based TFT exhibits more stable electrical performance than the SnO2 TFT after negative bias illumination stress testing. These results suggest that Mg0.05Sn0.95Ox is a promising material for high electron mobility TFT applications.

Automated summary

A 5-nm-thick Mg0.05Sn0.95Ox thin film deposited using mist chemical vapor deposition serves as a channel layer for TFT. Compared to SnO2, Mg0.05Sn0.95Ox enhances crystallinity, reduces oxygen deficiencies, and widens the energy bandgap. The Mg0.05Sn0.95Ox-based TFT exhibits higher field-effect mobility, steeper subthreshold slope, and more stable electrical performance, making it a promising material for high electron mobility TFT applications.