Au-Free Al0.4Ga0.6N/Al0.1Ga0.9N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV

In this article, the Au-free complementary metal oxide semiconductor (CMOS) transistor compatible AlGaN-channel high-electron-mobility transistors (HEMTs) on silicon substrate with 2-kV forward and reverse blocking voltages have been reported. Due to the designed AlGaN epitaxial layers, breakdown voltages (BVs) of the conventional AlGaN-channel HEMTs with L-GD = 5/10/15/20/25 mu m are 420/1070/1590/1920/2000 V respectively, and the values are increased to 760/1420/1980/1990/2000 V by using Schottky-drain technique. The reverse-blocking HEMTs demonstrate reverse blocking voltages of -790/-1300/-1810/-2000 V for L-GD = 5/10/15/20 mu m. Meanwhile, the conventional HEMT power figure-of-merit (FOM) of 397MW/cm(2) is the highest FOM for AlGaN-channel HEMTs on silicon, and the Schottky-drain HEMT forward FOM of 384 MW/cm(2) and reverse FOM of 321 MW/cm(2) are the highest FOM values for all GaN-based reverse-blocking HEMTs on silicon.

Automated summary

This study reports on Au-free complementary metal oxide semiconductor (CMOS) transistors compatible with AlGaN-channel high-electron-mobility transistors (HEMTs) on a silicon substrate with 2-kV forward and reverse blocking voltages. By using the Schottky-drain technique, the breakdown voltages of conventional AlGaN-channel HEMTs are significantly increased, reaching up to 1980 V, with the highest power figure-of-merit (FOM) of 397MW/cm(2) for all GaN-based reverse-blocking HEMTs on silicon.