相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。3-D NAND Technology Achievements and Future Scaling Perspectives
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IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
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Accurate Lifetime Estimation of Sub-20-nm NAND Flash Memory
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Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories
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A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations
Andrea Padovani et al.
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The influence of bottom oxide thickness on the extraction of the trap energy distribution in SONOS (silicon-oxide-nitride-oxide-silicon) structures
K. Bernert et al.
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Long term charge retention dynamics of SONOS cells
A. Arreghini et al.
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Numerical simulation of bottom oxide thickness effect on charge retention in SONOS flash memory cells
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A statistical model for SILC in flash memories
D Ielmini et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2002)
Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures
YL Yang et al.
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