相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Reliable noise modeling of GaN HEMTs for designing low-noise amplifiers
Anwar Jarndal et al.
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS (2020)
A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios
Dawid Kuchta et al.
MICROMACHINES (2020)
Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiNxgate dielectric*
Tao-Tao Que et al.
CHINESE PHYSICS B (2020)
Low temperature defect passivation technology for semiconductor electronic devices-supercritical fluids treatment process
T-C Chang et al.
MATERIALS TODAY PHYSICS (2020)
Performance Enhancement of AlGaN/GaN MIS-HEMTs Realized via Supercritical Nitridation Technology
Meihua Liu et al.
CHINESE PHYSICS LETTERS (2020)
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs
K. Mukherjee et al.
MICROELECTRONICS RELIABILITY (2019)
Strategies for using hydrogen-bond donor/acceptor solvent pairs in developing green chemical processes with supercritical fluids
Alif Duereh et al.
JOURNAL OF SUPERCRITICAL FLUIDS (2018)
A survey of Gallium Nitride HEMT for RF and high power applications
A. S. Augustine Fletcher et al.
SUPERLATTICES AND MICROSTRUCTURES (2017)
Low-temperature synthesis of BaTaO2N by an ammonothermal method
Tatsuro Toshima et al.
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN (2017)
Antioxidation Properties and Surface Interactions of Polyvinylpyrrolidone-Capped Zerovalent Copper Nanoparticles Synthesized in Supercritical Water
Takuya Morioka et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Ultrahigh-Speed GaN High-Electron-Mobility Transistors With fT/fmax of 454/444 GHz
Yan Tang et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
Keisuke Shinohara et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
Tsung-Ming Tsai et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Quality of the Oxidation Interface of AlGaN in Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors
Hsien-Chin Chiu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
Masafumi Tajima et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2009)
Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment
Min-Chen Chen et al.
SURFACE & COATINGS TECHNOLOGY (2009)
Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts
Rongming Chu et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs
Jinwook W. Chung et al.
IEEE ELECTRON DEVICE LETTERS (2008)
GaN-Based RF power devices and amplifiers
Umesh K. Mishra et al.
PROCEEDINGS OF THE IEEE (2008)
Low-temperature passivation of amorphous-silicon thin-film transistors with supercritical fluids
Chih-Tsung Tsai et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Investigations of HfO2/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
C Liu et al.
APPLIED PHYSICS LETTERS (2006)
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric -: art. no. 063501
PD Ye et al.
APPLIED PHYSICS LETTERS (2005)
A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
T Mizutani et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors
V Adivarahan et al.
IEEE ELECTRON DEVICE LETTERS (2003)