Normalization and Correction Factors for Magnetic Tunnel Junction Sensor Performances Comparison

In this manuscript we propose a calculation method where the magneto-resistive elements are modelled as fluctuating resistances to correct the output voltage noise of magnetic tunnel junction (MTJ) from standard electronic circuits. This method is validated on single elements, partial and full Wheat stone bridge circuits, giving rise to a correction factor affecting the output voltage noise as well as sensitivity values. Combining the correction factor and a normalization by the number of MTJs pillars and the pillar surface, we show that the performances extracted by this method allow universal comparison between any results from literature.

Automated summary

In this manuscript, a calculation method is proposed to model magneto-resistive elements as fluctuating resistances to correct the output voltage noise of magnetic tunnel junctions (MTJ) in standard electronic circuits. The method is validated on different circuit configurations, showing a correction factor that affects output voltage noise and sensitivity values. By combining the correction factor with normalization by the number of MTJ pillars and their surface area, this method allows for universal comparison of performance data from various literature sources.