期刊
IEEE SENSORS JOURNAL
卷 21, 期 15, 页码 16475-16483出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2021.3082205
关键词
AlGaN/GaN; gate recess; gas sensor; NO2
资金
- Beijing Innovation Center for Future Chips, Beijing National Research Center for Information
A suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor with an integrated micro-heater was fabricated and characterized using a precision two-step gate recess technique. The sensitivity and current change to NO2/air were significantly improved compared to conventional devices, and the response time was reduced to only about 25% of the value for conventional devices. The sensor also demonstrated excellent repeatability and cross-sensitivity.
Based on our proposed precision two-step gate recess technique, a suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor integrated with a micro-heater is fabricated and characterized. The controllable two-step gate recess etching method, which includes O-2 plasma oxidation of nitride and wet etching, improves gas sensing performance. The sensitivity and current change of the AlGaN/GaN heterostructure to 1-200 ppm NO2/air are increased up to about 20 and 12 times compared to conventional gate device, respectively. The response time is also reduced to only about 25 % of value for conventional device. The sensor has a suspended circular membrane structure and an integrated micro-hotplate for adjusting the optimum working temperature. The sensitivity (response time) increases from 0.75% (1250 s) to 3.5% (75 s) toward 40 ppm NO2/air when temperature increase from 60 degrees C to 300 degrees C. The repeatability and cross-sensitivity of the sensor are also demonstrated. These results support the practicability of a high accuracy and fast response gas sensor based on the suspended gate recessed AlGaN/GaN heterostructure with an integrated micro-heater.
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