4.6 Article

A Small-Signal Description of Black-Phosphorus Transistor Technologies for High-Frequency Applications

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Engineering, Electrical & Electronic

A Small-Signal GFET Equivalent Circuit Considering an Explicit Contribution of Contact Resistances

Anibal Pacheco-Sanchez et al.

Summary: A small-signal equivalent circuit for graphene field-effect transistors (GFETs) is proposed, taking into account the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact resistances from intrinsic parameters, obtained by a deembedding process, and extrinsic parameters of the circuit is considered. The experimental high-frequency performance of three devices from two different GFET technologies is properly described by the proposed small-signal circuit.

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS (2021)

Article Chemistry, Multidisciplinary

Black Phosphorus High-Frequency Transistors with Local Contact Bias

Cheng Li et al.

ACS NANO (2020)

Article Engineering, Electrical & Electronic

A Physics-Based Compact Model for Ultrathin Black Phosphorus FETs-Part II: Model Validation Against Numerical and Experimental Data

Elahe Yarmoghaddam et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

Article Engineering, Electrical & Electronic

Small-signal parameters extraction and noise analysis of CNTFETs

Javier N. Ramos-Silva et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2020)

Article Engineering, Electrical & Electronic

Accuracy ofY-function methods for parameters extraction of two-dimensional FETs across different technologies

A. Pacheco-Sanchez et al.

ELECTRONICS LETTERS (2020)

Article Engineering, Electrical & Electronic

Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies

Leslie Valdez-Sandoval et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2020)

Article Physics, Applied

A predictive model for high-frequency operation of two-dimensional transistors from first-principles

Biswapriyo Das et al.

JOURNAL OF APPLIED PHYSICS (2020)

Proceedings Paper Engineering, Electrical & Electronic

Black Phosphorus MOSFET for Future-Generation Thin-Film Electronics Capable of Microwave Operation

Kuanchen Xiong et al.

2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) (2019)

Article Nanoscience & Nanotechnology

Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures

Tiaoyang Li et al.

ADVANCED ELECTRONIC MATERIALS (2018)

Article Engineering, Electrical & Electronic

Assessment of High-Frequency Performance Limit of Black Phosphorus Field-Effect Transistors

Demin Yin et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)

Article Engineering, Electrical & Electronic

2.5 GHz integrated graphene RF power amplifier on SiC substrate

T. Hanna et al.

SOLID-STATE ELECTRONICS (2017)

Article Engineering, Electrical & Electronic

Black Phosphorous Thin-Film Transistor and RF Circuit Applications

Sk. F. Chowdhury et al.

IEEE ELECTRON DEVICE LETTERS (2016)

Article Chemistry, Multidisciplinary

Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies

Weinan Zhu et al.

NANO LETTERS (2016)

Article Multidisciplinary Sciences

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

Ashish V. Penumatcha et al.

NATURE COMMUNICATIONS (2015)

Article Chemistry, Multidisciplinary

Gigahertz Flexible Graphene Transistors for Microwave Integrated Circuits

Chao-Hui Yeh et al.

ACS NANO (2014)

Article Engineering, Electrical & Electronic

The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights

Han Liu et al.

IEEE ELECTRON DEVICE LETTERS (2014)

Article Engineering, Electrical & Electronic

Temporal and Thermal Stability of Al2O3-Passivated Phosphorene MOSFETs

Xi Luo et al.

IEEE ELECTRON DEVICE LETTERS (2014)

Article Chemistry, Multidisciplinary

Black Phosphorus Radio-Frequency Transistors

Han Wang et al.

NANO LETTERS (2014)

Article Engineering, Electrical & Electronic

Comparison of the pad-open-short and open-short-load deembedding techniques for accurate on-wafer RF characterization of high-quality passives

LF Tiemeijer et al.

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2005)