期刊
IEEE ELECTRON DEVICE LETTERS
卷 42, 期 6, 页码 875-878出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3075345
关键词
Pentacene; Absorption; Substrates; Photodetectors; Indium tin oxide; Broadband communication; Photoconductivity; Photodetector; UV-visible-NIR; Pentacene; CuO; responsivity; EQE; detectivity
This work introduces a photodetector based on an Al/Pentacene:CuO/ PEDOT:PSS/ITO structure, fabricated using a low-cost solution method on an ITO-coated glass substrate. The device exhibits broadband photodetection properties and self-biased characteristics, with good repeatability and stability observed through repetitive fabrication and measurements.
This work proposes an Al/Pentacene:CuO/ PEDOT:PSS/ITO structure based photodetector fabricated on an indium-tin oxide (ITO) coated glass substrate by low-cost solution method. The device uses Pentacene:CuO nanocomposite as the active layer and PEDOT:PSS as the hole transport layer (HTL). The proposed device shows a broadband photodetection properties with responsivities of similar to 35.25 A/W, similar to 8.74 A/W and similar to 2.75 A/W at wavelengths of similar to 380 nm (UV), similar to 600 nm (visible) and similar to 980 nm (NIR) under 1 V reverse bias voltage, respectively. The device also shows the self-biased property with the maximum responsivity of similar to 14.4 mA/W at similar to 600 nm under zero bias operation. The repeatability and stability of the device have been observed through repetitive device fabrication with subsequent measurements.
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